电阻随机存取存储器
材料科学
光电子学
电阻式触摸屏
电极
非易失性存储器
导电体
蒸发
功率消耗
数据保留
纳米技术
功率(物理)
复合材料
电气工程
化学
物理化学
工程类
物理
热力学
量子力学
作者
Yingtao Li,Shibing Long,HangBing Lü,Qi Liu,Qin Wang,Yan Wang,Sen Zhang,Wentai Lian,Su Liu,Ming Liu
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2011-01-01
卷期号:20 (1): 017305-017305
被引量:39
标识
DOI:10.1088/1674-1056/20/1/017305
摘要
In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.
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