Latest advances in gallium nitride HEMT modeling

GaN-based high electron mobility transistor (HEMT) has been considered as the next-generation technology for high-frequency/high-power and high-speed/high-voltage applications. This paper discusses the needs and challenges for advanced GaN HEMT models, and reviews latest advances by focusing on Compact Model Coalition's (CMC) newly launched effort on GaN HEMT model standardization and DynaFET, a unique characterization and modeling methodology that uses large-signal waveform measurement as a central input. Distinct technical approaches in DynaFET and CMC's candidate models (the Angelov-GaN model, the COMON model, the HSP model, and the MVSG-HV model) are highlighted.