The novel dopant for hole-transporting material opens a new processing route to efficiently reduce hysteresis and improve stability of planar perovskite solar cells

Perovskite solar cells (PSCs) emerging as the most promising next-generation photovoltaic devices have been received great attention. In the PSC device, admittedly, Spiro-OMeTAD is the most widely used hole-transporting material (HTM). However, the pristine Spiro-OMeTAD suffers from low hole mobility and conductivity, which requires chemical dopants (Li-TFSI and tBP) to increase conductivity thereby improving power conversion efficiency (PCE). Discouragingly, hygroscopic Li-TFSI can gravely degrade the perovskite film and diminish the stability of PSC. Meanwhile, tBP also gives rise to the degradation of perovskite film by forming a [PbI2·tBP] coordinated complex or iodopyridinate complex. In this study, F4-TCNQ is introduced into Spiro-OMeTAD as an alternative dopant to replace the commonly used Li-TFSI and tBP. By optimizing the doping concentration of F4-TCNQ, the PSC based on 1.5 mol% F4-TCNQ doped Spiro-OMeTAD exhibits the best PCE as high as 12.93%, which is comparable to that of 14.32% for reference device with Li-TFSI and tBP doped Spiro-OMeTAD. Moreover, the PSC based on F4-TCNQ doped Spiro-OMeTAD shows lower hysteresis and better stability. This work not only offers a promising dopant for Spiro-OMeTAD, but also provides a viable approach to address the challenges of hysteresis and instability.