Enhanced charge separation at 2D MoS2/ZnS heterojunction: KPFM based study of interface photovoltage

Two dimensional (2D) MoS2/ZnS heterojunctions with MoS2 thickness varying from monolayer to bulk have been prepared by sulfurization of a controlled thickness of Mo deposited on the ZnS thin films. Kelvin probe force microscopy measurements on MoS2/ZnS junction having varying thicknesses of MoS2 layers are carried out in the surface and junction modes, under white light exposure. Differences in the surface potential values of the surface and junction modes represent interface photovoltages at heterojunctions. Enhanced interface photovoltage is observed in junctions having the mono and few layer MoS2 in comparison to bulk MoS2 layer. This suggests the active participation of 2D MoS2 layer in photon absorption and charge separation processes taking place close to the junction. The present study is an effort towards the integration of 2D layered materials with 3D semiconductors, which may be advantageous for the development of 2D material based optoelectronic devices.