光致发光
单层
带隙
材料科学
半导体
拉曼散射
吸收(声学)
拉曼光谱
图层(电子)
光电子学
红外线的
直接和间接带隙
光学
纳米技术
物理
复合材料
作者
Claudia Ruppert,Burak Aslan,Tony F. Heinz
出处
期刊:Nano Letters
[American Chemical Society]
日期:2014-10-10
卷期号:14 (11): 6231-6236
被引量:979
摘要
Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.
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