Deposition of Ti2AlC and Ti3AlC2 epitaxial films by magnetron sputtering

Thin films of the Mn+1AXn-phases Ti2AlC and Ti3AlC2 have been deposited by dc magnetron sputtering. In agreement with the Ti–Si–C system, the MAX-phase nucleation is strongly temperature dependent. At 900°C epitaxial films of Ti2AlC and Ti3AlC2 were grown, but at 700°C only a cubic (Ti,Al)C phase was formed. In addition, a perovskite carbide, Ti3AlC was grown at 800°C. A bulk resistivity of 0.51μΩm, 0.44μΩm, and 1.4μΩm was measured for the Ti3AlC2, Ti2AlC, and Ti3AlC films deposited at 900°C, respectively. By nanoindentation the hardness and Young’s module was determined for an epitaxial Ti3AlC2 film to 20GPa and 260GPa, respectively.