材料科学
碲化镉光电
同步辐射
异质结
紫外线
导带
谱线
红外线的
电子能带结构
半金属
光电子学
准费米能级
原子物理学
带隙
光学
物理
凝聚态物理
电子
天文
量子力学
作者
Chunfeng Cai,Huizhen Wu,Jianxiao Si,Shuqiang Jin,Zhang Wen-Hua,Yang Xu,Junfa Zhu
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2010-07-01
卷期号:19 (7): 077301-077301
被引量:8
标识
DOI:10.1088/1674-1056/19/7/077301
摘要
The energy band structure with type-I alignment at the PbTe/CdTe(111) heterojunction interface is determined by the ultraviolet photoelectron spectrum using synchrotron radiation. The valence band and conduction band offsets are obtained to be 0.09±0.12 and 1.19±0.12 eV, respectively. These results are in agreement with theoretically predicted ones. The accurate determination of the valence band and conduction band offsets is useful for the fundamental understanding of the mid-infrared light emission from the PbTe/CdTe heterostructures and its application in devices.
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