Nanostructured LaFeO3/Si thin films grown by pulsed laser deposition

The orthorhombic LaFeO 3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO 3 film deposited at 850 °C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe 0.82 O 3- δ .