场效应晶体管
材料科学
散粒噪声
噪音(视频)
光电子学
半导体
金属
晶体管
电子工程
电气工程
工程类
计算机科学
冶金
人工智能
电压
探测器
图像(数学)
作者
Yoshioki Isobe,Kiyohito Hara,D. Navarro,Youichi Takeda,T. Ezaki,Mitiko Miura-Mattausch
出处
期刊:IEICE Transactions on Electronics
[Institute of Electronics, Information and Communications Engineers]
日期:2007-04-01
卷期号:E90-C (4): 885-894
被引量:7
标识
DOI:10.1093/ietele/e90-c.4.885
摘要
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing a two dimensional device simulator in conjunction with the shot noise model of a p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes. The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme. At DC or low-frequency region, sub-threshold current dominates the intensity of shot noise. Therefore, shot noise is independent on frequency in this region, and its intensity is exponentially depends on V G , proportional to L -1 , and almost independent on V D . At high-frequency region above GHz frequency, on the other hand, shot noise intensity depends on frequency and is much larger than that of low-frequency region. In particular, the intensity of the RF shot noise is almost independent on L, V D and V G . This suggests that high-frequency shot noise intensity of MOSFETs is decided only by the conditions of source-bulk junction.
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