突发噪声
噪声发生器
材料科学
MOSFET
闪烁噪声
强度(物理)
散粒噪声
噪音(视频)
次声
光电子学
物理
晶体管
噪声谱密度
噪声系数
噪声地板
光学
噪声测量
电气工程
声学
工程类
降噪
计算机科学
CMOS芯片
人工智能
电压
图像(数学)
探测器
放大器
作者
Y Isobe,Kohjiro Hara,D. Navarro,Y. Takeda,T. Ezaki,M. Miura–Mattausch
标识
DOI:10.1093/ietele/e90-c.4.885
摘要
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET).In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction.The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes.The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme.At DC or lowfrequency region, sub-threshold current dominates the intensity of shot noise.Therefore, shot noise is independent on frequency in this region and its intensity is exponentially depends on V G , proportional to L -1 , and almost independent on V D .At highfrequency region above GHz frequency, on the other hand, shot noise intensity is frequency dependent and is quite larger than that of low-frequency region.In particular, the intensity of the RF shot noise is almost independent on L, V D and V G .This suggests that high-frequency shot noise intensity is decided only by the conditions of source-bulk junction.
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