Electron Mobility in Ge, Si, and GaP

Abstract Theoretical calculations of electron mobility in the indirect crystals Ge, Si, and GaP are presented. The model assumes parabolic and spherical conduction band minima and includes piezoelectric, acoustic, polar, Coulomb, and intervalley scattering with appropriate electron‐phonon selection rules in all cases. Fermi statistics are accounted for and no further approximations (e.g. relaxation, trial function) are made, since drift mobility is calculated from an exact iterated solution. Recent selection rules for Si and GaP lead to agreement with experiment and suggest that low‐energy LA phonons are unimportant for intervalley scattering.