Preparation and characterization of In2Se3 crystals

Abstract In2Se3 compound has been grown from the melt by using the Bridgman-Stockbarger method. The obtained ingots were polycrystalline with large layered single crystal regions from which samples for physical characterization were cut. Conductivity measurements as a function of temperature were made which indicated the α-β reversible phase transformation in In2Se3 at about 200 ° C.