铁电性
材料科学
二硫化钼
单层
压电响应力显微镜
极化(电化学)
光电子学
化学气相沉积
非易失性存储器
纳米技术
化学
复合材料
电介质
物理化学
作者
Ariana E. Nguyen,Pankaj Kumar Sharma,Thomas Scott,Edwin Preciado,Velveth Klee,Dezheng Sun,I-Hsi Lu,David Barroso,SukHyun Kim,V. Ya. Shur,Andrey R. Akhmatkhanov,Alexei L. Gruverman,Ludwig Bartels,P. A. Dowben
出处
期刊:Nano Letters
[American Chemical Society]
日期:2015-04-24
卷期号:15 (5): 3364-3369
被引量:69
标识
DOI:10.1021/acs.nanolett.5b00687
摘要
The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the "up" domains, while slightly quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.
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