二氯硅烷
氯硅烷
三氯氢硅
密切的
化学
基准集
硅烷
热分解
计算化学
分解
过渡态理论
二甲基硅烷
物理化学
外推法
工作(物理)
热力学
反应速率常数
数学
有机化学
动力学
硅
物理
锗
量子力学
数学分析
密度泛函理论
作者
Stephen P. Walch,Christopher E. Dateo
摘要
Calculations have been carried out for the thermal decomposition of silane, chlorosilane, dichlorosilane, and trichlorosilane. In each case, the stationary point geometries and harmonic frequencies were characterized using CASSCF/derivative methods and the cc-pVDZ basis set. Accurate energetics were obtained by combining the CCSD(T) results using the a-cc-pVTZ basis set with an extrapolation to the basis set limit using the a-cc-pVDZ, a-cc-pVTZ, and a-cc-pVQZ basis sets at the MP2 level. The geometries, energetics, and harmonic frequencies were used to obtain rate constants using conventional transition state theory. The barrier heights obtained in the present work (kcal/mol) are the following: SiH4 → SiH2 + H2 (61.9); SiClH3 → SiClH + H2 (66.7); SiClH3 → SiH2 + HCl (76.9); SiCl2H2 → SiCl2 + H2 (77.2); SiCl2H2 → SiClH + HCl (74.8); SiCl3H → SiCl2 + HCl (72.7). The computed barrier heights are believed to be accurate to within 1 kcal/mol. The rate coefficients obtained in the present work are in fair accord with most of the experimental results.
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