堆积
材料科学
表面能
极限抗拉强度
电子结构
结晶学
理论(学习稳定性)
粘结强度
电荷密度
密度泛函理论
结构稳定性
化学
计算化学
复合材料
结构工程
机器学习
物理
工程类
有机化学
量子力学
计算机科学
作者
Xiangkai Chen,Xiaohua Chen,Zidong Wang,Jian Yang,Kaixuan Chen,Yanlin Wang
标识
DOI:10.1016/j.commatsci.2022.111485
摘要
Using density-functional theory, the stability of the (0 0 1) Al and (0 0 1) θ' surfaces is evaluated by calculating their surface energy. The bonding strength and stability of the (0 0 1)α-Al//(0 0 1)θ' interface with four different atomic stacking sequences (Cu-HCP, Cu-OT, Al-HCP and Al-OT) are determined by first-principles tensile test and interfacial energy calculation, respectively. Results show that the stability of the (0 0 1) θ' surface is significantly weaker as compared to the (0 0 1) Al surface. The interface with the HCP stacking sequence is the most stable geometry and possesses the lowest interfacial energy and the strongest interface bonding. A relationship is established among the interface bonding strength, interfacial energy and interface stability. The interface with larger the interface bonding strength possesses smaller interfacial energy and higher interface stability. Analysis in terms of the electronic structure shows that the average absolute value of Bader charge of terminating Cu (or Al) of the (0 0 1) θ' surface is quite large, which results in the weak stability of the (0 0 1) θ' surface. The high bonding strength and stability for the interface with the HCP stacking sequence are ascribed to the strong charge accumulation between atoms across the interface.
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