金属有机气相外延
材料科学
纳米技术
外延
图层（电子）
标识
DOI：10.1201/9781439807002
摘要
Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecomm
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