肖特基二极管
二极管
材料科学
光电子学
肖特基势垒
金属半导体结
晶体管
功率半导体器件
反向二极管
电气工程
电压
工程类
作者
Wongil Shin,Gyuho Myeong,Kyunghwan Sung,Seung‐Ho Kim,Hongsik Lim,Boram Kim,Taehyeok Jin,Ji Hoon Park,Kenji Watanabe,Takashi Taniguchi,Fei Liu,Sungjae Cho
摘要
Today's circuit technology requires low-power transistors and diodes to extend Moore's law. While research has been focused on reducing power consumption of transistors, low-power diodes have not been widely studied. Here, we report a low-power, thus steep-slope Schottky diode, with a “cold metal” source. The Schottky barrier between metal electrode and bulk MoS2 enabled the diode behavior, and the steep-slope diode IV curve originated from the change in the density of states of a graphite (cold metal) source with a bias voltage. The MoS2 Schottky diode with a cold metal exhibits an ideality factor (η) < 1 for more than four decades of drain current with a sizable rectifying ratio (108). The realization of a steep-slope Schottky diode paves the way to the improvement in low-power circuit technology.
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