半最大全宽
结晶度
材料科学
化学气相沉积
基质(水族馆)
钻石
兴奋剂
氮气
拉曼光谱
Crystal(编程语言)
分析化学(期刊)
纳米技术
化学工程
光电子学
光学
复合材料
化学
物理
有机化学
海洋学
工程类
地质学
计算机科学
程序设计语言
作者
Min-su Kim,Tae Young Jang,Jin Gwon,Tae Yong Kim,Mun Ki Bae
标识
DOI:10.1142/s0217984922420192
摘要
Nitrogen-doped homoepitaxial single-crystal diamond (SCD) films were grown on an SCD substrate by hot filament chemical vapor deposition (HFCVD) to confirm the potential that can yield high-quality single-crystal diamonds. The SCD films doped with 50 sccm nitrogen, grown by HFCVD, showed excellent surface properties based on optical microscopy, with a growth rate of 3.4 [Formula: see text]m/h, and a Raman peak around 1332 cm[Formula: see text] with a full width at maximum (FWHM) of 5.8 cm[Formula: see text], indicating high crystallinity. The FWHM of the (004) peak in the rocking curve was 392 arcsec for the nitrogen-doped SCD film, and that of the SCD substrate was 489 arcsec. Therefore, the crystalline properties and growth rates of the SCD films grown in the HFCVD system were improved, and the effect of nitrogen doping was verified.
科研通智能强力驱动
Strongly Powered by AbleSci AI