记忆电阻器
神经形态工程学
仿真
材料科学
钙钛矿(结构)
计算机科学
电阻式触摸屏
逻辑门
电气工程
导电体
纳米技术
电子工程
伤害感受器
随机存取
夹持器
电阻随机存取存储器
嵌入式系统
切换时间
压缩传感
泄漏(经济)
非易失性存储器
光电子学
随机投影
工程类
作者
Xu Han,T.C. Chai,Yuchan Wang,Shiming Zhao,Ting Chen,Wenxia Zhang,Kailiang Zhang
标识
DOI:10.1021/acs.jpclett.5c02632
摘要
Driven by the demand for device multifunctionality in fields such as neuromorphic computing, biomimetic sensing, and information security, memristors have become a research focus due to their dual capabilities of data storage and signal processing. Herein, a Cs3BiBr6 lead-free perovskite memristor with a sandwich structure of Ag/PMMA/Cs3BiBr6/ITO is fabricated and systematically investigated. Under a low current compliance of 1 mA, the device demonstrates stable bipolar resistive switching behavior, including over 800 switching cycles, an average on/off ratio greater than 20, and good data retention. At 10 mA, random high-resistance state distribution enables construction of a true random number array. The switching mechanism is dominated by Ag atoms and bromide vacancies driving conductive filaments fracture-regeneration. Moreover, the device emulates the nociceptor function in biological systems, achieving graded stimulus discrimination and postinjury hyperalgesia reproduction. Additionally, OR/AND/XOR logic gates are constructed via bipolar resistive switching, with digital information and image encryption/decryption realized via the integration of the random key matrix.
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