Recent Progress in Oxide Interface‐Based Two‐Dimensional Electron Gas Systems: Conventional Devices and Emerging Hybrid Applications

ABSTRACT 2D electron gas (2DEG) systems formed at oxide interfaces have attracted significant attention due to their unique properties, including high carrier mobility, strong spin‐orbit coupling (SOC), and 2D superconductivity. These systems, especially those based on SrTiO 3 (STO), KTaO 3 (KTO), and BaSnO 3 (BSO) oxide interfaces, exhibit a range of exceptional physical phenomena that arise from the complex interactions between the interface and quantum effects. However, challenges remain in terms of interface quality, process integration, and thermal stability, which hinder the large‐scale application of these systems. Recent advancements in quasi‐2DEG (q2DEG) systems, achieved through Ar + ‐ion bombardment‐assisted (AIBA) techniques, have shown the potential for integrating 2D materials with oxide interfaces. These hybrid systems demonstrate novel phenomena, such as enhanced optical conductivity and multi‐field modulation, which provide new pathways for device applications. This review highlights the progress in both traditional 2DEG systems and emerging hybrid oxide‐2D interfaces, emphasizing their formation mechanisms, properties, and potential applications in electronics, spintronics, and optoelectronics. Future research will focus on improving interface quality, minimizing defects, and exploring new material combinations to optimize device performance and enable next‐generation technologies.