Monolithically Integrated 100 GHz Ge Photodetectors with High Responsivity of 0.96 a / W Across C+L Band

High-performance Ge photodetectors were fabricated and investigated. The incorporation of the stressor enables the photodetection across C+L band. By optimizing the strain, a low dark current of$17 n A$, a high 3dB-bandwidth of 100 GHz and a high responsivity of$0.96 ~\mathrm{A} / \mathrm{W}$were accomplished simultaneously.