化学机械平面化
抛光
材料科学
纳米-
纳米技术
钥匙(锁)
冶金
计算机科学
复合材料
计算机安全
作者
Houda Bellahsene,Saad Sene,Gautier Félix≠,Joulia Larionova≠,Marc Ferrari,Yannick Guari≠
出处
期刊:Nanomaterials
[Multidisciplinary Digital Publishing Institute]
日期:2025-09-04
卷期号:15 (17): 1366-1366
被引量:9
摘要
Chemical Mechanical Polishing (CMP) is a critical process in many industries where achieving superior surface quality through controlled material removal rates by using nano-abrasives is essential. This review examines key parameters of abrasives at the nanoscale, such as size, shape, aspect ratio, hardness, and surface modifications, through inorganic doping or organic molecule grafting and their influence on CMP performance. By analyzing recent studies, we explore how these parameters affect the tribological and chemical interactions during CMP and link these effects to the fundamental polishing mechanisms. Highlighting emerging trends, this work offers a roadmap for designing next-generation nano-abrasives that boost removal efficiency, enhance surface finish, and ensure process stability. Ultimately, controlling abrasive properties at the nanoscale is vital for advancing CMP technology toward more efficient, consistent, and high-quality results.
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