Unveiling of free carrier transport and ion migration in a 2D–3D perovskite mixture for stable optoelectronic devices

characteristics in both vertical and lateral devices. We carefully analyzed the influence of nanostructures on charge transport using conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). The variation in the spatial response of the photocurrent and surface photovoltage across grains and grain boundaries with different phases of the 2D perovskite was carefully examined. These insights provide a pathway for optimizing the electrical properties and charge transport behavior of mixed perovskites, further positioning them as key materials for the development of efficient and stable optoelectronic devices.