降级(电信)
材料科学
氧化物
光电子学
工程物理
电气工程
工程类
冶金
作者
Y.H. Lee,Hoyoung Song,Dongjin Choi,MyeongSeob Sim,Dong‐Hyun Kim,Yoonmook Kang,Hae‐Seok Lee
出处
期刊:Solar RRL
[Wiley]
日期:2025-03-01
卷期号:9 (6)
被引量:1
标识
DOI:10.1002/solr.202400860
摘要
Tunnel oxide passivated contact (TOPCon) solar cells achieve efficiencies exceeding 26% by incorporating a heavily doped poly‐Si layer with a tunnel oxide, with recent efforts focusing on enhancing the rear passivation structure. In industrial TOPCon cells, the high‐temperature firing process during metal contact formation degrades the passivation quality of poly‐Si/SiO x contacts, necessitating improvements to maintain cell performance. While previous studies examine degradation factors related to the rear structure, research on mechanisms driven by the firing process remains limited. This study identifies how excess hydrogen, rather than phosphorus in‐diffusion, degrades passivation quality by diffusing from SiN x into SiO x during the firing process. Thermal stress during the firing process dissociates c‐Si/SiO x bonds, while interstitial hydrogen accumulates at the SiO x interface and forms hydrogen pores as defects, reducing passivation quality. To mitigate this, we introduce an Al 2 O 3 layer as a hydrogen diffusion barrier, effectively preventing hydrogen diffusion into SiO x . This approach increases the implied open‐circuit voltage (iV oc ) after firing, achieving a record 729.8 mV with Al 2 O 3 /SiN x double passivation layers. These findings advance the understanding of degradation mechanisms in industrial TOPCon solar cells during firing and offer practical strategies for optimizing industrial‐scale solar cell manufacturing.
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