Diamond: Recent Progress in Synthesis and Its Potential in Electronics

钻石 纳米技术 数码产品 材料科学 工程物理 工程类 冶金 电气工程
作者
Xiang Zhang,Mingfei Xu,Zhi Kai Ng,Róbert Vajtai,Edwin Hang Tong Teo,Yuji Zhao,Pulickel M. Ajayan
出处
期刊:Chemistry of Materials [American Chemical Society]
卷期号:37 (8): 2679-2698 被引量:18
标识
DOI:10.1021/acs.chemmater.5c00248
摘要

Diamond, with its extraordinary physical and electrical properties, has emerged as a transformative material for next-generation electronics. Its ultrawide bandgap, superior thermal conductivity, high carrier mobility, and excellent mechanical characteristics uniquely position it to address the limitations of traditional semiconductor materials. However, realizing the full potential of diamond in electronic applications requires overcoming significant challenges in its synthesis scalability, defect and dislocation control, and advanced device fabrication. In this Perspective, we discuss strategies and recent advancements in the synthesis of single-crystalline diamond in wafer scales as well as the reduction of defects and dislocations. The development of new diamond morphologies is also reviewed, underscoring their potential to modify properties and broaden application domains. Furthermore, we highlight the progress in engineering diamond-based electronic devices, particularly, field-effect transistors (FETs). Innovations in surface conductivity optimization and the realization of stable, normally off-device operation have enhanced the performance and reliability of diamond devices. Key areas for future research are proposed throughout, offering insights into the opportunities and challenges that remain in diamond synthesis and harnessing diamond’s full potential for next-generation electronic applications.
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