Demonstration of 3.5kV SiC Deep-Implanted Superjunction Didoes

Silicon carbide Superjunction Junction Barrier Schottky (JBS) diodes were fabricated with 24um thick drift layers using ultra-high energy implantation and epitaxial overgrowth. The resulting devices achieved breakdown voltages of 3.8kV with differential on-state resistances of $4.5\mathrm{m}\Omega\bullet \text{cm}^{2}$ in the JBS linear region. This is about 45% lower than the conventional unipolar limit. When characterized dynamically, the JBS diode exhibited the negligible turn-on recovery and small reverse recovery expected of a unipolar device. On-off conduction cycling of co-fabricated PiN diodes showed no measurable increase in forward voltage drop or diode leakage after repeated bipolar conduction stressing.