Molecular dynamics simulation of the interaction of an Ar/CH4 plasma with a surface: Growth, structure, and sputtering of the deposited C:H films

Abstract Molecular dynamics simulations were performed to investigate the growth of hydrocarbon films with a surface at temperatures from 300 to 1000 K. The results show that C 2 H is the main precursor of film growth. The formed C:H films are mainly unsaturated and dominated by double bonds and CN 3 carbon atoms. The evolution of the C:H film is considered under the bombardment of the two major ions (Ar + and C 2 H 3 + ) with energies ranging from 50 to 100 eV. Film sputtering is significant above 50 eV, while at lower energies, the atoms of the C 2 H 3 + ions can be incorporated and contribute to the growth.