Design of GaAs microcavity on SiN waveguide for efficient single-photon generation by resonant excitation

Abstract Silicon nitride (SiN) photonic circuits are attracting significant interest as a platform for photonic quantum information processing. Integration of deterministic single photon sources (SPSs) is required for large-scale single-photon-based quantum applications. InAs/GaAs quantum dots (QDs) have been demonstrated to be state-of-the-art deterministic SPSs under resonant excitation. However, InAs/GaAs QD SPSs integrated on chip often suffer from unwanted crosstalk from scattering of resonant excitation laser. Moreover, the mismatch in refractive indices of SiN and GaAs impedes efficient coupling of single photons into the photonic circuit. In this work, we design a GaAs photonic crystal (PhC) nanobeam cavity with an embedded QD on top of a SiN waveguide in SiO 2 that can suppress crosstalk from resonant excitation and realize high coupling efficiency at the same time. The crosstalk is reduced by employing a carefully designed nanobeam cavity that removes complex structures around the excitation spot. The high coupling efficiency is achieved with a weak hybridized mirror formed by proximity of GaAs PhC nanobeam and SiN waveguide that makes the cavity and helps transferring photons into the waveguide. This enables more than 90% coupling efficiency. The designed device is expected to be a bright source of indistinguishable photons.