Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures

Hafnium oxide (HfO2) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO2 films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO2–Si) based on them are presented.