响应度
光电探测器
暗电流
钙钛矿(结构)
材料科学
载流子
光电子学
探测器
纳米技术
计算机科学
工程物理
物理
电信
工程类
化学工程
作者
Prasun Kumar,Vivek Kumar Shukla,Min Gyu Kim,Ranbir Singh
标识
DOI:10.1016/j.sna.2024.115076
摘要
Perovskite photodetectors (PPDs) are emerging as one of the revolutionary optoelectronic device that explore the benefits of photoactive perovskite materials. Recently, PPDs have been demonstrated to detect wide/narrow spectra with strong responsivity and excellent detectivity (D* ∼ 1014 Jones). However, dark current (Id) is an important parameter for PDs which is typically high for PPDs and limits the device performance. Therefore, it is critical to comprehend the origin of Id and reducing methods before applying them to real-world applications such as imaging, sensors, surveillance cameras, etc. A smaller Id is imperative for the detection of low-intensity incident photons, which directly affects the Ion/Ioff, linear dynamic range (LDR), and responsivity in PDs. Generally, Id arises due to uncontrolled charge carrier injection, traps, and leakage paths in PPDs. Although, control over the Id leads to optimize the other important parameters of PPDs like noise current and responsivity. Thus, the origin and strategies to minimize Id have been summarized by exploring the morphological transformation of the photoactive perovskite layers, choice of the transport layers, and device architectures. Moreover, the future perspective and challenges are highlighted that need to be addressed before commercializing PPD-based technology.
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