The Performance of FRAM Integrated With 3D Trench Hf0.5Zr0.5O2 Ferroelectric Capacitor

The characteristics of ferroelectric material will ultimately affect the performance of ferroelectric random access memory (FRAM). In this paper, the 3D trench ferroelectric capacitor was manufactured and integrated in FRAM. The 3D ferroelectric capacitor acquires optimal performance with maximum and stable remanent polarization after 1000 to 3000 wake-up cycles. All the FRAM devices acquire 100% data accuracy rate after 6000 wake-up cycles ultimately, for the decrease of voltage in bit line.