Submicron Vertical Channel Organic Electrochemical Transistors with Ultrahigh Transconductance

Abstract Organic electrochemical transistors (OECTs) belong to the class of electrolyte gated organic transistors (EGOTs) that offer a smooth interface with biology in combination with high transconductance values of typically a few mS. Fabrication‐wise, though, most of the up‐to‐date reported devices are limited to two dimensional structures, where the transistor channel is patterned on the same plane as the source and drain electrodes. Here, a method is introduced for the fabrication of integrated vertical channel OECTs (vOECTs) with submicron channel length. By employing electrodeposition, a vertical channel sandwiched between the source and drain electrodes is created. Channel lengths down to 60 nm are demonstrated, giving rise to ultrahigh transconductance of up to 275 mS. Accounting for the voltage loss on the device connection tracks, an intrinsic transconductance of vOECTs of 500 mS is found. The vOECTs are three‐dimensional transistors finding relevant application in “organ‐on‐a‐chip” and implantable devices, where high amplification and small footprint are demanded.