钻石
材料科学
复合材料
复合数
热导率
微观结构
热膨胀
电镀
散热片
金刚石材料性能
电气工程
工程类
图层(电子)
作者
Yongpeng Wu,Jiangbo Luo,Yan Wang,Guilian Wang,Hong Wang,Zhuoqing Yang,Guifu Ding
标识
DOI:10.1016/j.ceramint.2019.04.008
摘要
Despite the great potential value as heat sink materials, their practical application of high thermal conductivity (TC) Cu-diamond composites is limited since high temperature and high pressure (above 1000 K and 60 MPa) were requisite in the conventional process. In this study, high TC void-free Cu-diamond composites reinforced with various diamond particles were prepared via composite electroplating. The impacts of diamond particle sizes (ranged from 10 to 400 μm) on microstructure, interface and TC of the composites were investigated. The TC of Cu-diamond composites was improved with the increase of diamond particle sizes and well-combined interface. Interestingly, a critical size for improved the TC of Cu-diamond composites was clearly observed and the critical value (22 μm) was derived from Kipitza theory. Based on the TC results and critical analysis, the Cu-diamond composite reinforced with large diamond particles (400 μm) was synthesized, which possessed the TC of 846.52 W m−1 K−1 and the thermal expansion coefficient of 7.2 × 10−6 K−1. Such attractive thermal properties suggested that electroplating Cu-diamond composites showed the promising application as heat sink materials in microelectronic industry.
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