材料科学
光电探测器
钙钛矿(结构)
光电子学
电极
平面的
宽带
光电二极管
表面粗糙度
表面光洁度
双层
光电流
织物
可穿戴计算机
可穿戴技术
纳米技术
电子工程
降级(电信)
图层(电子)
发光二极管
异质结
块(置换群论)
蜂窝结构
作者
Mohammad Adil Afroz,Ankita Sengupta,Amit Rawal,Abhijit Majumdar,Soumitra Satapathi
标识
DOI:10.1021/acsaelm.5c02485
摘要
Textiles, widely used in our daily lives, hold immense potential as platforms for next-generation flexible and wearable electronics. However, fabricating photodetectors (PDs) on textiles is challenging due to surface roughness and poor film formation. Here, we demonstrate practical textile-based broadband perovskite PDs fabricated via low-temperature (up to 100 °C) solution-based processing on a UV-resin planarized textile substrate. A lateral geometry with interdigitated electrodes enables a flexible device architecture without rigid transparent electrodes. Direct contact between metal electrodes and perovskite leads to device failure due to interfacial reactions and metal diffusion into the perovskite layer; this is resolved by introducing a bilayer interfacial structure (Fullerene, C 60 /bathocuproine, BCP) that mitigates degradation and enhances charge transport. The optimized planar PDs exhibit significantly improved performance over control devices, along with excellent mechanical, environmental, and thermal stability. These results demonstrate a scalable approach for integrating perovskite optoelectronics into textiles, opening avenues for wearable and disposable electronic applications.
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