Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications
作者
Johan Swerts,Sébastien Couet,Enlong Liu,Sofie Mertens,Tianyi Lin,Siddharth Rao,Woo Hyun Kim,Sven Van Elshocht,Arnaud Furnemont,Gouri Sankar Kar
标识
DOI：10.1109/intmag.2017.8007702
摘要
Perpendicular magnetic tunnel junctions (MTJ) are widely being researched as they are the key component in advanced spin transfer torque magnetic random access memory (STT-MRAM).
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(2025-6-4)
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