低压差调节器
补偿(心理学)
频率补偿
超调(微波通信)
材料科学
跌落电压
电压调节器
晶体管
电容
电容器
电压
控制理论(社会学)
光电子学
CMOS芯片
电气工程
计算机科学
工程类
物理
放大器
电极
人工智能
量子力学
控制(管理)
心理学
精神分析
作者
Venkat Harish Nammi,Nitya R. Thota,Paul M. Furth,Wei Tang
标识
DOI:10.1109/mwscas.2017.8053169
摘要
A controlled comparison of three compensation techniques - nested Miller compensation (NMC), Split-Length compensation (SLC) and the new Split-Transistor compensation (STC) - is performed in a multi-stage low-dropout voltage regulator (LDO). The LDO with STC used 41% and 84% lower total compensation capacitance compared to the LDOs with SLC and NMC, respectively. To verify the proposed compensation technique, a micro-power LDO using STC has been fabricated in a 0.5-μm CMOS process. Experimental results show an undershoot of 126 mV for a 1 μA -50 mA load step and an overshoot of 556 mV for a 50 mA-1 μA load step. At a total quiescent current of less than 5 μA, the fabricated micro-power LDO with STC finds application in IoT devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI