High-Performance MoS2 Photodetectors by Photogating
光电探测器
光电子学
材料科学
计算机科学
作者
Seyed Saleh Mousavi Khaleghi,Jianyong Wei,Kenneth B. Crozier,Yaping Dan
标识
DOI：10.1109/cleo-pr60912.2024.10676900
摘要
We fabricated MoS2 photodetectors on a Si PN junction. A photovoltage was generated across the junction as a photogate modulating Mos2 channel, resulting in high photoresponses. The photoresponses were investigated at different wavelength and temperature.
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(2025-6-4)
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