材料科学
量子点
光电子学
纳米技术
工程物理
工程类
作者
Jaedong Jang,Hyunsu Cho,Sukyung Choi,Hyewon Jeon,Chan‐mo Kang,Yong-Jae Kim,Hohyung Kang,Donghyo Hahm,Jin Sun Kim,J.J. Jeong,Jeong‐Ah Kim,Won‐Seok Choi,Soo‐Yeon Cho,Woo‐Bin Jung,Duk Young Jeon,Wan Ki Bae,Hyoc‐Min Youn,Nam Sung Cho,Hee‐Tae Jung
标识
DOI:10.1002/adom.202402147
摘要
Abstract Quantum dot (QD) color conversion‐based displays have emerged as one of the most promising next‐generation devices due to their superior emission properties in terms of color expression. To date, however, existing QD color conversion layer (QD‐CCL) technologies have suffered from low luminance and power efficiency, mainly due to significant light absorption by the bank structure. Here, the color conversion efficiency of QD‐CCL has been significantly enhanced by fabricating a highly reflective metal layer on the side surface of the bank structure. Using a high‐aspect‐ratio silver reflector fabricated through a secondary sputtering lithographic technique involving argon ion bombardment, the fabricated QD‐CCL is combined with a blue organic light‐emitting diode (OLED) serving as a light source. As a result, light recycling from the reflector significantly enhances color conversion efficiency and luminance by up to 4.60‐fold and 4.29‐fold, respectively. Optical simulation reveals that higher pixel resolution provides greater reflection probabilities during extraction. This photomask‐free approach is not only simple but also highly compatible with existing semiconductor fabrication processes, making it a viable commercial alternative for all color‐converting structures that utilize light‐emitting materials with omnidirectional emission characteristics.
科研通智能强力驱动
Strongly Powered by AbleSci AI