80‐4: Highly Reliable, As‐Grown Crystalline InGaZnO TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of High‐Resolution AMOLED Display

We report a low‐cost method for growing highly‐oriented crystalline InGaZnO (C‐IGZO) for a high‐resolution, active‐matrix thin‐film transistor (TFT) backplane for organic light‐emitting diode displays using spray pyrolysis. The self‐aligned, coplanar oxide TFT with an as‐grown C‐IGZO channel layer demonstrates a threshold voltage of‐0.35 V, saturation mobility of 33.99 cm 2 V ‐1 s ‐1 , and subthreshold swing of 0.15 Vdec ‐1 , with an on/off current ratio exceeding 10 8 . Moreover, the C‐IGZO TFT with a channel length of 1.16 μm exhibits excellent operational stability under bias temperature stress.