Boosting(机器学习)
MOSFET
转换器
功率MOSFET
电子工程
计算机科学
功勋
沟槽
电气工程
功率(物理)
工程类
晶体管
材料科学
电压
物理
机器学习
量子力学
计算机视觉
图层(电子)
复合材料
作者
Ralf Siemieniec,Simone Mazzer,Gerhard Noebauer,Cesar Braz,David Laforet,E. Pree,Alessandro Ferrara
标识
DOI:10.23919/epe23ecceeurope58414.2023.10264444
摘要
This work discusses the advantages of a new trench power MOSFET technology applying a new design approach. Along with the improvements recorded in the main switching figures of merit, the recently introduced technology is also proven to shine in soft-switching ZVS applications. It is shown how the new device design practically eliminates one of the loss mechanisms in the device itself when operated in ZVS, supporting a clear improvement in the overall system efficiency.
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