光电探测器
材料科学
异质结
光电流
光电二极管
响应度
光电子学
暗电流
比探测率
带隙
耗尽区
半导体
作者
Zhaoying Xi,Zeng Liu,Lili Yang,Kai Tang,Lei Li,Gao-Hui Shen,Maolin Zhang,Shan Li,Yufeng Guo,W.H. Tang
标识
DOI:10.1021/acsami.3c07597
摘要
Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/ε-Ga2O3 p-n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 × 104 under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 × 1011 Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/ε-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/ε-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.
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