Effect of oxidant sources on carbon-related impurities in ALD-Al2O3 for solid-state devices

Abstract In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD)-Al 2 O 3 by focusing on the plasma-induced decomposition of –CH 3 groups which is attributed to ALD precursor. We found that C–O bonds were detected in ALD-Al 2 O 3 using O 2 plasma instead of the C–H bonds which is attributed to the –CH 3 groups of trimethylaluminum. It is considered that the decomposition of –CH 3 groups was enhanced by O 2 plasma, and C–O residue was generated. We concluded that the decomposition of –CH 3 groups by oxidant sources must be suppressed to reduce the carbon-related impurities in ALD-Al 2 O 3 .