光探测
异质结
光电流
光电探测器
材料科学
铁电性
光电子学
范德瓦尔斯力
量子效率
电场
物理
电介质
量子力学
分子
作者
Jian Wang,Changlong Liu,Libo Zhang,Jin Chen,Jian Chen,Fei Yu,Zengyue Zhao,Weiwei Tang,Xin Li,Zhaozhong Shi,Guanhai Li,Lin Wang,Y. Frank Cheng,Xiaoshuang Chen
标识
DOI:10.1002/advs.202205813
摘要
Owing to the large built-in field for efficient charge separation, heterostructures facilitate the simultaneous realization of a low dark current and high photocurrent. The lack of an efficient approach to engineer the depletion region formed across the interfaces of heterojunctions owing to doping differences hinders the realization of high-performance van der Waals (vdW) photodetectors. This study proposes a ferroelectric-controlling van der Waals photodetector with vertically stacked two-dimensional (2D) black phosphorus (BP)/indium selenide (In2 Se3 ) to realize high-sensitivity photodetection. The depletion region can be reconstructed by tuning the polarization states generated from the ferroelectric In2 Se3 layers. Further, the energy bands at the heterojunction interfaces can be aligned and flexibly engineered using ferroelectric field control. Fast response, self-driven photodetection, and three-orders-of-magnitude detection improvements are achieved in the switchable visible or near-infrared operation bands. The results of the study are expected to aid in improving the photodetection performance of vdW optoelectronic devices.
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