Design and simulation of mid-wavelength InAs/GaSb type-II superlattice avalanche photodiodes

A. At an operating temperature of 300 K, the SACM APD demonstrates a gain of 73.4 with a reverse bias voltage of 35 V, surpassing the performance of the SAM structure. These findings provide critical insights for the design of high-performance mid-wave infrared detectors, highlighting the potential of T2SL-APDs in achieving high gain and low dark current.