MOF-Assisted Annealing-Free Crystallization Technology of Perovskites toward Efficient and Stable Perovskite Solar Cells

Although annealing is a commonly used crystallization method for perovskite films in perovskite solar cells (PSCs), the high thermal energy consumption and limitations on flexible devices hinder their further industrial application. We herein propose an annealing-free crystallization technology for perovskite films, assisted by the Zr-metal-organic framework (MOF) interface between SnO₂ and the perovskite. It is found that the Zr-MOF interface can accelerate the formation of perovskite intermediates and promote their conversion into perovskite crystals even without annealing. The trap density thus decreases by about one fold, accompanied by significant increases in electron and hole mobilities, resulting in enhanced carrier extraction and suppressed charge recombination. Therefore, the Zr-MOF-based PSC attains a power convention efficiency (PCE) of 20.24%, 2.2 times that (9.26%) of the pristine PSC. Furthermore, the Zr-MOF interface layer can significantly improve the air and thermal stabilities of PSCs. The Zr-MOF-based PSC exhibits 93% of its initial PCE versus 52% for the pristine PSC after 1018 h of storage in air. Additionally, after 360 h of continuous heating at 65 °C, the Zr-MOF-based PSC retains 91% of its initial PCE against 44% for the pristine PSC.