Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
作者
Po-Hsien Lai,Ssu-I Fu,Yan-Ying Tsai,Chih-Hung Yen,Chung-I Kao,Chun‐Wei Chen,Wen-Chau Liu
标识
DOI：10.7567/ssdm.2005.p6-13
摘要
2005 International Conference on Solid State Devices and Materials,Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
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(2025-6-4)
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