电光调制器
发射机
消光比
光子学
硅光子学
调制(音乐)
带宽(计算)
光电子学
物理
光学
电子工程
材料科学
相位调制
计算机科学
光调制器
电信
工程类
波长
频道(广播)
相位噪声
声学
作者
Cheng Li,Kunzhi Yu,Jinsoo Rhim,Kehan Zhu,Nan Qi,Marco Fiorentino B,Thierry J. Pinguet,Mark C. Peterson,Vishal Saxena,Samuel M. Palermo
出处
期刊:
日期:2018-10-01
卷期号:: 32-35
被引量:37
标识
DOI:10.1109/bcicts.2018.8551089
摘要
Silicon photonic interconnects have the potential to break bandwidth-distance limitations intrinsically associated with electrical links. This paper presents a dual-mode NRZ/PAM4 silicon photonic transmitter based on a segmented-electrode Mach-Zehnder Modulator (SE-MZM). The electrical portion of the transmitter, fabricated in a 16nm FinFET process, utilizes stacked-CMOS push-pull driver stages that include a parallel asymmetric fast discharging path to compensate for the slow transition edge caused by the nonlinear capacitance of the reversed-biased MZM diode segments. High-speed PAM4 modulation is achieved with phase interpolators for coarse delay control between the MSB and LSB segments and by employing independent digital-controlled delay lines on a per-segment basis to match the optical propagation delay. The 56 Gb/s optical transmitter achieves 9.5 dB extinction ratio and 12.6 pJ/bit power efficiency, excluding laser power, when driving the flip-chip bonded MZM designed in a 130 nm SOI process.
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