微电子
表征(材料科学)
透射电子显微镜
异质结
纳米技术
材料科学
电子全息术
扫描透射电子显微镜
电子断层摄影术
超级电容器
过渡金属
高分辨率透射电子显微镜
电子
光电子学
化学
物理
电容
物理化学
催化作用
量子力学
生物化学
电极
作者
Rafael G. Mendes,Jinbo Pang,Alicja Bachmatiuk,Huy Q. Ta,Liang Zhao,Thomas Gemming,Lei Fu,Zhongfan Liu,Mark H. Rümmeli
出处
期刊:ACS Nano
[American Chemical Society]
日期:2019-01-24
被引量:61
标识
DOI:10.1021/acsnano.8b08079
摘要
Investigations on monolayered transition metal dichalcogenides (TMDs) and TMD heterostructures have been steadily increasing over the past years due to their potential application in a wide variety of fields such as microelectronics, sensors, batteries, solar cells, and supercapacitors, among others. The present work focuses on the characterization of TMDs using transmission electron microscopy, which allows not only static atomic resolution but also investigations into the dynamic behavior of atoms within such materials. Herein, we present a body of recent research from the various techniques available in the transmission electron microscope to structurally and analytically characterize layered TMDs and briefly compare the advantages of TEM with other characterization techniques. Whereas both static and dynamic aspects are presented, special emphasis is given to studies on the electron-driven in situ dynamic aspects of these materials while under investigation in a transmission electron microscope. The collection of the presented results points to a future prospect where electron-driven nanomanipulation may be routinely used not only in the understanding of fundamental properties of TMDs but also in the electron beam engineering of nanocircuits and nanodevices.
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