Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique

In this work, single crystals of bismuth silicon oxide (BSO; Bi 12 SiO 20 ) have been grown by the Czochralski method. The growth conditions were studied. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. The structure of the Bi 12 SiO 20 has been investigated by x-ray diffraction (XRD), and Raman and Fourier transform infrared spectroscopy (FTIR) spectroscopy. The results obtained are discussed and compared with the published data. The pale yellow Bi 12 SiO 20 single crystals prepared were without cores. Using spectroscopic measurements 19 Raman and 5 IR modes were observed.