灵敏度(控制系统)
光电子学
材料科学
航程(航空)
电子工程
工程类
复合材料
作者
A. Müller,Г. Константинидис,Ioana Giangu,Valentin Buiculescu,Adrian Dinescu,A. Ştefănescu,А. Ставринидис,Г. Ставринидис,A. Ziaei
标识
DOI:10.1109/mwsym.2014.6848483
摘要
The paper presents the manufacturing of GaN based single SAW resonator temperature sensing structures, having IDTs with fingers/interdigit spacing width within 200-120 nm range. "On wafer" hot plate resonance frequency vs. temperature measurements were performed in the 20-150°C temperature range. Further measurements have been performed in the -268-+150°C temperature range, using a cryostat setup. The sensitivities obtained demonstrate the advantage of GaN SAW resonators as temperature sensors.
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