Ultralow contact resistance in electrolyte-gated organic thin film transistors

We show that the parasitic contact resistance in staggered organic thin film transistors employing a solid electrolyte as the gate dielectric is around RC=10 Ω cm, two orders of magnitude lower than in conventional devices. Moreover, this parameter is only weakly dependent on the thickness of the semiconductor and on the nature of the metal/semiconductor pair. This unique feature of an electrolyte-gated transistor results from the electrochemical doping of the active layer occurring under the influence of the applied gate bias.